IPP60R190E6 datasheet

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О ДАТАШИТЕ

• Маркировка
  IPP60R190E6
• Производитель
  Infineon Technologies
• Описание
  Infineon Technologies IPP60R190E6 Continuous Drain Current: 20.2 A Current - Continuous Drain (id) @ 25?° C: 20.2A Drain To Source Voltage (vdss): 600V Drain-source Breakdown Voltage: 650 V Fet Feature: Standard Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 63nC @ 10V Gate-source Breakdown Voltage: 20 V Id(max) @ Tc=25?°c: 20.2 A Idpuls (max): 59.0 A Input Capacitance (ciss) @ Vds: 1400pF @ 100V Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 55 C Mounting Style: Through Hole Mounting Type: * Package: TO-220 Package / Case: * Packages: PG-TO220-3 Power - Max: 151W Power Dissipation: 151 W Rds On (max) @ Id, Vgs: 190 mOhm @ 9.5A, 10V Rds(on) @ Tj=25?°c Vgs=10: 190.0 mOhm Resistance Drain-source Rds (on): 0.17 Ohms Series: CoolMOS?„? Transistor Polarity: N-Channel Vds (max): 600.0 V Vgs(th) (max) @ Id: 3.5V @ 630?µA
• Количество страниц
  17 шт.
• Форматы файла
  HTML, PDF

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